人資專員(HMG-人資部)
【Qualifications】 • A Master’s degree in EE, Physics, or a related field. • Expertise in power devices, with a spotlight on UMOS, SGT, LDMOS, MLSJ, GaN and SiC. • Comprehensive understanding of device physics and semiconductor manufacturing processes. • Proficiency in semiconductor simulation tools. • Strong English communication skills, catering to both technical and non-technical stakeholders. 【Overview】 MOSFET Design Team offers the innovative environment for talents to dive deep into the world of device design, platform development, and research. We offer working locations in both Xindian and Tainan. Come and join us to focus on the most cutting-edge semiconductor materials and applications! 【Key Responsibilities】 • Develop and execute innovative device layouts in line with customer requirements, ensuring optimal functionality and efficiency. • Partner with PE and Quality teams to enhance device reliability and address any arising issues in time. • Establish and continuously optimize SPICE models to reflect the characteristics of both new and existing devices. • Work alongside the PIE team and collaborate with external foundries, paving the way for the next generation of advanced devices. • Drive the research and patenting efforts centered around novel designs, applications, and advanced materials, such as GaN and SiC. • Accomplish additional tasks delegated by the supervisor.公司地址:
新北市新店區/台南市歸仁區(台灣分公司)其他:
None-2024-09-17